Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

Abstract

In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si2+ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.