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Mid-IR resonant cavity detectors
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Citations
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References
2017
Year
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsEngineeringPhysicsInfrared SensorOptical PropertiesCavity QedApplied PhysicsLow NoiseInfrared OpticDetector PhysicInstrumentationResonant Cavity DetectorsMolecular Beam EpitaxyOptoelectronics
Resonant cavity detectors based on III–V materials have been designed, grown entirely by molecular beam epitaxy, fabricated, and tested. They offer a low noise (dark current densities of 0.4 mA/cm2 were measured at 298 K, close to the predicted value of 0.31 mA/cm2), narrow response detector (full width at half maximum of 57 nm in GaSb and 45 nm in InAs) in the mid-infrared region, with future applications in spectroscopy, gas sensing, and optical communications.
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