Growth of ordered and disordered ZnSnN2

Abstract

A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.