Publication | Closed Access
The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs
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Citations
0
References
2002
Year
Unknown Venue
Device ModelingMultiple Carrier ModelElectrical EngineeringSemiconductor DeviceEngineeringElectronic EngineeringBias Temperature InstabilityPower ElectronicsLifetime ExtractionMicroelectronicsInterface Trap GenerationCircuit Simulation
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