Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2017 · 17 citations · 17 references
Thin Film PhysicsEngineeringBuffer LayerBuffer LayersPhotovoltaic DevicesThin Film Process TechnologyPhotovoltaicsSemiconductorsIi-vi SemiconductorChemical EngineeringSolar Cell StructuresBand Gap EnergyThin Film ProcessingThin-film TechnologySolar Energy UtilisationMaterials ScienceElectrical EngineeringThin-film FabricationThin Film MaterialsSemiconductor MaterialSurface ScienceApplied PhysicsThin Film DevicesZno Buffer LayerThin FilmsSolar CellsChemical Vapor DepositionSolar Cell Materials
The binary compound SnS consists of elements that are non‐toxic, inexpensive, and abundant in the Earth's crust. It is a p‐type semiconductor with a band gap energy of 1.3 eV and an absorption coefficient of 10 4 cm −1 , and is therefore a potential candidate for use as a solar cell absorber material. In this study, SLG/Mo/SnS/CdS/ZnO:Al/Al and SLG/Mo/SnS/ZnO/ZnO:Al/Al SnS thin‐film solar cells with different buffer layers were fabricated using a co‐evaporation method. The dependence of the photovoltaic properties of the SnS thin‐film solar cells with CdS or ZnO as the buffer layer was investigated. We demonstrate that the device with a ZnO buffer layer exhibited higher conversion efficiency and short‐circuit current density compared to the device with a CdS buffer layer.
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