A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

R. Vauché, Eloi Muhr, O. Fourquin, Sylvain Bourdel, Jean Gaubert, N. Dehaese, S. Meillère, H. Barthélemy, Laurent Ouvry

IEEE Transactions on Circuits and Systems I Regular Papers · 2017 · 40 citations · 27 references

DOIFull text

Open access

Concepts

Abstract

This paper presents a high-rate IR-UWB transceiver chipset implemented in a 130-nm CMOS technology for WBAN and biomedical applications in the 3.1-4.9 GHz band. The transmitter is based on a pulse synthesizer and an analytical up-converted Gaussian pulse is used to predict its settings. Its measured peak-to-peak output voltage is equal to 0.9 Vpp on a 100 Ω load for a central frequency of 4 GHz, and a supply voltage of 1.2 V, which gives an emitted energy per pulse of 0.64 pJ. The receiver is a non-coherent architecture based on an LNA followed by a peak-voltage detector. A BER of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> is measured for a 3.1-4.9 GHz input peak-to-peak pulse amplitude of 1.1 mV, which corresponds to a sensitivity of -85.8 dBm at 1 Mb/s and gives a communication range estimated to 1.9 m.

References

27