High-Density Reconfigurable Devices With Programmable Bottom-Gate Array

Abstract

A novel poly-Si reconfigurable device with a programmable bottom-gate (BG) array is demonstrated for the first time. The BG has non-volatile memory functionality. This device is very efficient in terms of device size and functionality. By changing the bias or program/erase state of the BGs, a device can be transformed to a certain device type among n-/p-MOSFETs, and n-p and p-n diodes. The threshold voltage (Vth) and contact resistance (Rc) of MOSFETs can be controlled independently by the BGs. The subthreshold swings for n-/p-MOSFETs are 200 and 230 mV/decade, respectively. The I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> s of the n-/p-MOSFETs measured from a single reconfigurable device are more than 106, which are comparable to those of conventional poly-Si devices.