An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET

Abstract

A continuous accurate analytical drain current model considering the effect of the inversion charge is presented for the double-gate heterojunction tunneling FET. The band-to-band tunneling current is calculated analytically in terms of the integration with respect to the generation rate using a tangent line approximation method. The accuracy of the model is validated by comparing it with the TCAD simulation. The model, applied to the example of GaAsSb/InGaAs heterojunction, predicts the surface potential profiles, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> - V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> - V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> characteristics accurately. Under different device parameters (gate oxide dielectric constant, gate oxide thickness, and heterojunction materials), the validity of the model is demonstrated by its agreement with the TCAD simulation.