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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

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Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

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