Publication | Open Access
Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al<sub>2</sub>O<sub>3</sub>
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Citations
38
References
2017
Year
Materials ScienceAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorEngineeringAlno/algan/gan Mis DiodeNanotechnologyInterface EngineeringApplied PhysicsSurface ScienceAlno Nano-filmsAluminum Gallium NitrideGan Power DevicePeald Alternate InsertionAtomic Layer DepositionAlgan/gan Heterojunction
In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by alternating growth of AlN and Al<sub>2</sub>O<sub>3</sub> using plasma enhanced atomic layer deposition (PEALD).
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