2016 · 401 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyEmbedded Memory BlocksMetal-oxide-semiconductor Field-effect TransistorsCmos ScalingElectrical PropertiesFerroelectric Field-effect TransistorsFerroelectric Random-access MemoryLow-power Memory ArchitectureLow-power Memory CircuitsTemperature RetentionUltra-low-power Cmos
We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
3
Ferroelectricity in hafnium oxide thin films
T. S. Böscke, Johannes Müller, D. Bräuhaus et al. · Applied Physics Letters · 2011 · 2.7K citations
Natural Sciences, Materials Engineering, Materials Science +17