Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Abstract

Performances of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly developed technology computer-aided design (TCAD) simulation. This simulation fully couples the Landau-Khalatnikov (L-K) equation with the physical equations for FinFETs in 3-D. It reveals an excellent immunity against short-channel effects in NC-FinFETs owing to NC-enhancement by the gate-to-drain coupling, for the first time. NC-FinFETs with a gate length of 10 nm are projected to operate with more than 26 times energy-efficiency of conventional FinFETs.