Applied Physics Letters · 2017 · 33 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCrystal StructureElectronic MaterialsEpitaxial GrowthOxide SemiconductorsPerovskite MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsDeposition TechniquesHeterostructuresHigh-resolution Electron MicroscopyHigh-resolution Transmission Electron MicroscopyMolecular Beam EpitaxyPerovskite OxidesPulsed Laser DepositionSuperlattice Growth
Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.
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