Proceedings - International Symposium for Testing and Failure Analysis · 2012 · 14 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSurface EngineeringSurface ScienceCross SectionsIntegrated Circuit DesignInterconnect TechnologyPlasma Surface TreatmentPlasma-surface InteractionsElectron Backscatter DiffractionElectron Backscatter Diffraction AnalysisGrain StructureGrain Structure ControlInterface PerformanceSectioningThrough-silicon Vias
Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.