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Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling
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2012
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Materials ScienceAdvanced PackagingEngineeringPowder MetallurgyMaterial ProcessingCross SectioningAdvanced Packaging (Semiconductors)Interconnect (Integrated Circuits)Applied PhysicsCu Filled TsvsCross Section AnalysisElectronic PackagingDifferent Plasma-fibManufacturing EngineeringThrough Silicon ViaMicrostructureMetal Processing
Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.