ACS Nano · 2017 · 156 citations · 51 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportOrganic SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesCharge Transport MeasurementsConductivity In Thin FilmsDevice FabricationDirected TransportElectrical Conductivity MeasurementsElectrical Transport PropertiesElectrode InterfacesOptoelectronic Properties
were obtained for the oriented films. Impedance measurements of the hole-only devices provided further electrical description of the oriented BDT-COF films in terms of capacitance, recombination resistance, and dielectric constant. An exceptionally low dielectric constant value of approximately 1.7 was estimated for the BDT-COF films, a further indication of their highly porous nature. DFT and molecular-dynamics simulations were carried out to gain further insights into the relationships between the COF layer interactions, electronic structure, and the potential device performance.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
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Density-functional thermochemistry. III. The role of exact exchange
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