A 0.67- <inline-formula> <tex-math notation="LaTeX">$\mu\text{W}$</tex-math> </inline-formula> 177-ppm/°C All-MOS Current Reference Circuit in a 0.18- <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math> </inline-formula> CMOS Technology

Abstract

This brief describes a nanopower current reference circuit that has been fabricated in a standard 0.18-μm CMOS technology. The proposed circuit is an extension of the resistorless current reference circuit suggested by Oguey and Aebischer. This extension is a simple circuit arrangement that is capable of reducing the temperature coefficient (TC) of Oguey's circuit. The measurements have been done on ten prototypes in the temperature range of -40 °C to +85 °C. The measured average reference current is 92.2 nA with the average TC value of 177 ppm/°C. The measured average reduction of ≈68% has been achieved in TC value of Oguey's circuit after implementing the proposed arrangement. The operating supply voltage for the proposed circuit ranges from 1.25 to 1.8 V with the line sensitivity of 7.5%/V. The measured maximum average power dissipation of the proposed current reference circuit is 0.67 μW at the supply voltage of 1.8 V.