Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

Abstract

A novel heterojunction symmetric U-shaped gate tunnel FET (SUTFET) is proposed and investigated by Silvaco Atlas simulation. The U-shaped gate in the SUTFET can enlarge the area of the tunneling junction and facilitate the implementation of a smaller device area. Benefit from the line band-to-band tunneling process and symmetric structure design, bidirectional current flows (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 13.5 μA/μm, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> = 3.1 pA/μm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> = V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 0.5 V) with the steep-switching feature of subthreshold slope (SS = 15.2 mV/decade at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> = 0.05 V and average SS = 37.2 mV/decade from 0 V <; VGS <; 0.05 V) are implemented. The effects of doping concentration and geometric dimensions on the device performance are investigated in order to create the SUTFET design guideline. The considerable good performance of the SUTFET makes it very attractive for ultralow-power applications.