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Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi<sub>2</sub>Te<sub>3</sub>/Sb<sub>2</sub>Te<sub>3</sub> by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates
36
Citations
46
References
2017
Year
Materials ScienceMaterials EngineeringEpitaxial GrowthTransition Metal ChalcogenidesEngineeringVolmer–weber GrowthCrystal Growth TechnologySurface ScienceCondensed Matter PhysicsApplied PhysicsSeed SubstratesNucleation Kinetics ModelsBi2te3/sb2te3 StackingIsland GrowthSuccessive StackingLayered MaterialMolecular Beam EpitaxyCrystal Formation
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.
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