Concepedia

Author

Fereshte Ghahari

National Institute for Materials ScienceORCID

Also Known As

F. Ghahari, Fereshte Ghahari, Ghahari, Fereshte

39

Publications

3.9K

Citations

11

H-Index

36

Concepts

All Affiliations

National Institute for Materials ScienceColumbia UniversityHarvard UniversityNational Institute of Standards and TechnologyUniversity of Maryland, College Park
FG

About

Fereshte Ghahari is an author at National Institute for Materials Science specializing in engineering, applied physics, and condensed matter physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

8

8

3.7K

2

Applied Physics

8

8

3.7K

3

Natural Sciences

3

3

2K

4

Electrical Engineering

1

1

596

5

Materials Engineering

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1

36

Fereshte Ghahari

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10

Publications

3.8K

Citations

10

H-Index

YearCitations

Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices

Cory R. Dean, Lei Wang, Patrick Maher,

Nature

2013

1.7K

Observation of the fractional quantum Hall effect in graphene

Kirill I. Bolotin, Fereshte Ghahari, Michael Shulman,

Nature

2009

1K

Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene

Adam W. Tsen, Lola Brown, Mark Levendorf,

Science

2012

596

Enhanced Thermoelectric Power in Graphene: Violation of the Mott Relation by Inelastic Scattering

Fereshte Ghahari, Hong-Yi Xie, Takashi Taniguchi,

Physical Review Letters

2016

196

An on/off Berry phase switch in circular graphene resonators

Fereshte Ghahari, Daniel Walkup, Christopher Gutiérrez,

Science

2017

133

Magnetoresistance Measurements of Graphene at the Charge Neutrality Point

Yüe Zhao, Paul Cadden-Zimansky, Fereshte Ghahari,

Physical Review Letters

2012

92

Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi<sub>2</sub>Te<sub>3</sub>/Sb<sub>2</sub>Te<sub>3</sub> by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates

Hoseok Heo, Ji Ho Sung, Ji‐Hoon Ahn,

Advanced Electronic Materials

2017

36

Achieving <i>μ</i>eV tunneling resolution in an <i>in-operando</i> scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research

Johannes Schwenk, S Kim, Julian Berwanger,

Review of Scientific Instruments

2020

28

Electric field effects in graphene/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures and nanostructures

Mengchen Huang, Giriraj Jnawali, Jen‐Feng Hsu,

APL Materials

2015

21

Tuning single-electron charging and interactions between compressible Landau level islands in graphene

Daniel Walkup, Fereshte Ghahari, Christopher Gutiérrez,

Physical review. B./Physical review. B

2020

20

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