Mechanisms for optical loss in SOI waveguides for mid-infrared wavelengths around 2<i>μ</i>m

Abstract

We report the measurement of optical loss in submicron silicon-on-insulator waveguides at a wavelength of 2.02 μm for the fundamental TE mode. Devices were fabricated at IMEC and at ASTAR's Institute of Microelectronics (IME) and thus these measurements are applicable to studies which require fabrication using standard foundry technology. Propagation loss for strip and rib waveguides of 3.3 ± 0.5 and 1.9 ± 0.2 dB cm−1 were measured. Waveguide bending loss in strip and rib waveguides was measured to be 0.36 and 0.68 dB per 90° bend for a radius of 3 μm. Doped waveguide loss in rib waveguides was measured for both n-type and p-type species at two doping densities for each doping type. Measured results from propagation, bending, and free-carrier loss were found to be in good agreement with analytical or numerical models. Loss due to lattice defects introduced by ion-implantation is found to be underestimated by a previously proposed empirical model. The thermal annealing of the lattice defects is consistent with removal of the silicon divacancy.