Publication | Open Access
Band Alignment and Charge Transfer in Complex Oxide Interfaces
110
Citations
49
References
2017
Year
EngineeringIntrinsic LimitationsTmos ShowsComplex Oxide InterfacesCharge TransportSemiconductor DeviceSemiconductor NanostructuresSemiconductorsNanoelectronicsCharge Carrier TransportMaterials ScienceNew SchemeElectrical EngineeringSemiconductor TechnologyOxide ElectronicsOxide SemiconductorsSemiconductor MaterialMicroelectronicsApplied Physics
Intrinsic limitations of semiconductors have spurred a search for new materials that can be used in next generation electronics, and transition-metal oxides (TMOs) are attractive candidates. A new scheme for predicting the electrical and magnetic behavior of TMOs shows promise for helping design future components.
| Year | Citations | |
|---|---|---|
Page 1
Page 1