Concepedia

Band structure of the EuO/Si interface: justification for silicon spintronics

L. L. Lev, Dmitry V. Averyanov, Andrey M. Tokmachev, F. Bisti, V. A. Rogalev, Vladimir N. Strocov, Vyacheslav G. Storchak

Journal of Materials Chemistry C · 2016 · 41 citations · 62 references

DOI

Concepts

Abstract

The band offset of 1.0 eV at the EuO/Si interface attests the technological potential of the system for silicon spintronics.

References

62

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Electrical spin injection in a ferromagnetic semiconductor heterostructure

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Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

G. Schmidt, D. Ferrand, L. W. Molenkamp et al. · Physical review. B, Condensed matter · 2000 · 2K citations · Full text

, , +17

Challenges for semiconductor spintronics

D. D. Awschalom, Michael E. Flatté · Nature Physics · 2007 · 1.7K citations

, , +12

Thermodynamic stability of binary oxides in contact with silicon

K. J. Hubbard, Darrell G. Schlom · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 1.2K citations

, , +14