High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiers

Abstract

A highly linear pseudomorphic spike-doped MESFET has been developed. This highly linear MESFET has been demonstrated at 10 GHz. Based on this device, two types of monolithic broadband amplifiers were designed and fabricated. Both the device and circuits achieved state-of-the-art linearity results while maintaining a low DC power consumption.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>