Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2 - Concepedia

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Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

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Citations

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References

2012

Year

Shahjahan N. Murad, Paul Baine, David McNeill, S.J.N. Mitchell, B.M. Armstrong, M. Modreanu, G. Hughes, Rajesh Kumar Chellappan

Solid-State Electronics

Electrical EngineeringDielectric ConstantEngineeringInterfacial Geo2 LayersSurface ScienceApplied PhysicsMultilayer HeterostructuresLayered MaterialHigh-κ Gate Stacks

References

	Year	Citations

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