High temperature (≫200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET

Abstract

Volume and weight limitations for components in hybrid electrical vehicle (HEV) propulsion systems demand highly-compact and highly-efficient power electronics. The application of silicon carbide (SiC) semiconductor technology in conjunction with high temperature (HT) operation allows the power density of the DC-DC converters and inverters to be increased. Elevated ambient temperatures of above 200degC also affects the gate drives attached to the power semiconductors. This paper focuses on the selection of HT components and discusses different gate drive topologies for SiC JFETs with respect to HT operation capability, limitations, dynamic performance and circuit complexity. An experimental performance comparison of edge-triggered and phase-difference HT drivers with a conventional room temperature JFET gate driver is given. The proposed edge-triggered gate driver offers high switching speeds and a cost effective implementation. Switching tests at 200degC approve an excellent performance at high temperature and a low temperature drift of the driver output voltage.