Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

Abstract

This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.