Impact of DRAM process technology on neutron-induced soft errors

Abstract

Single event upsets from terrestrial cosmic rays (i.e. high-energy neutrons) are more important than alpha particle induced soft errors in modern DRAM devices. A high intensity broad spectrum neutron source from the Los Alamos Neutron Science Center (LANSCE) was used to characterize the nature of these upsets in DRAM technologies ranging from 180 nm down to 70 nm from several vendors and then to assess the impact of these events on high density server memory.