3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Abstract

Sub-0.2-/spl mu/m AlGaN/GaN HEMTs were successfully scaled to 1.05 mm gate-width with minor gain reduction. On-chip single-stage amplifiers exhibited gains of 8 dB and 7.5 dB, as well as output powers of 3.6 W and 3.5 W, at 30 GHz and 35 GHz, respectively. This multi-watt output power at millimeter-wave frequencies well exceeded previous state-of-the-art for a GaN HEMT and is comparable to that from 6-7 times larger GaAs-based devices.