SiGe bipolar technology for mixed digital and analogue RF applications

Abstract

A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced transistor performance. With an 88 GHz dynamic frequency divider and a 12 GHz low noise amplifier with 1.9 dB noise figure, state-of-the-art results for digital as well as analogue applications are achieved.