200°C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 μm thick SOI

Abstract

This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This paper also verifies, for the first time, that thin SOI is a promising candidate for 200/spl deg/C high-temperature operation, because switching speed does not deteriorate at high temperature.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>