Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT

Abstract

The authors report on the fabrication and characterization of a high-performance 80-nm self-aligned T-gate AlInAs/GaInAs high electron mobility transistor (SAGHEMT). The 80 nm*50 mu m devices reported exhibit good pinchoff characteristics, high transconductance (g/sub m/=1150 mS/mm), low output conductance (g/sub ds/=120 mS/mm at RF), and state-of-the-art current gain cutoff frequency (f/sub T/=250 GHz). Modeling and analysis indicate that it is possible to significantly improve the performance of AlInAs/GaInAs SAGHEMTs by further reducing the gate length and/or optimizing the device structure.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>