Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference

Abstract

Metallic diffusion through high-K HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m,eff</sub> ) of 4.25 and 5.15 eV are obtained in TaTb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m,eff</sub> of 4.15 and 4.9 eV are also obtained in Yb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Si/HfAlON and Ir <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Si/HfAlON FUSI-gates by reduced metal diffusion at lower temperature