Publication | Closed Access
V/sub th/ fluctuation induced by statistical variation of pocket dopant profile
40
Citations
1
References
2002
Year
Unknown Venue
Statistical Dopant VariationPocket DopantsElectrical EngineeringPocket Dopant ProfileEngineeringProfile ModificationPhysicsStatistical VariationApplied PhysicsPocket ProfileV/sub Th/ FluctuationMicroelectronics
This paper studies effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation. A pocket profile significantly enhances V/sub th/ fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible. This is because pocket dopants shrink the area which controls V/sub th/.
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