Bias-dependent performance of high-power AlGaN/GaN HEMTs

Abstract

Large-signal behavior with a fixed load and varying supply voltages was proposed for characterizing the quality of AlGaN/GaN HEMTs. Improved devices demonstrated constantly high PAEs of 56-62% at 8 GHz throughout a wide voltage range from 10 to 40 V. These 300-/spl mu/m-wide devices also generated 3.1-W output power with only 3.4-dB gain compression at 45 V, which translates to 10.3-W/mm power density; the highest for any FET of the same size.