A 140 GHz ft and 60 GHz fmax DTMOS integrated with high-performance SOI logic technology

Abstract

We integrated an RF-nMOSFET with 130-nm SOI high-end logic technology. Using the dynamic threshold structure (DTMOS) and channel engineering, we obtained an ft of 140 GHz and an fmax of 60 GHz when Vgs=0.65 V and Vds=1.5 V, while the logic CMOS showed Ion-Ioff characteristics better than those reported for SOI-CMOS devices. The RF characteristics were analyzed using a newly developed small-signal equivalent circuit model that has an additional current source to express the body contribution of the DTMOS. These analyses revealed that channel engineering is important in improving RF performances.