Low-temperature APCVD oxide using TEOS-ozone chemistry for multilevel interconnections

Abstract

A low-temperature APCVD (atmospheric-pressure chemical vapor deposition) process using TEOS-O/sub 3/ chemistry has been investigated as an interlayer dielectric application technique for multilevel interconnections. The deposition rates depend on the substrate materials, and the oxide films self-planarize the underlying topography, exhibiting smooth flowing profiles of step coverage as deposited. High-quality films can be formed by increasing the deposition temperature and the O/sub 3//TEOS ratio, and much more improvement can be achieved by annealing. This process has been successfully applied to submicron devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>