Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

Abstract

We incorporate an effective potential in a three-dimensional MOSFET simulation, in which the transport is handled by an ensemble Monte Carlo approach. We find that the threshold voltage is shifted and the carrier density is moved away from the interface, both effects given by quantization provided within the channel. However, the mean velocity of the carriers is not affected significantly by the introduction of this effective potential, and is only reduced by about 10%.