Electrolyte‐Gated Organic Field‐Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

Abstract

This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.