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Growth parameter enhancement for MoS<sub>2</sub> thin films synthesized by pulsed laser deposition
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2016
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Large AreaNanosheetEngineeringTwo-dimensional MaterialsLaser ApplicationsLaser AblationLaser DepositionThin Film Process TechnologyPulsed Laser DepositionEpitaxial GrowthThin Film ProcessingMaterials ScienceCrystalline DefectsAbstract Two‐dimensional MaterialsLayered MaterialGrowth Parameter EnhancementSurface ScienceApplied PhysicsGrapheneThin FilmsChemical Vapor Deposition
Abstract Two‐dimensional materials such as graphene and MoS 2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab‐scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS 2 layered films on amorphous (SiO 2 ) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∼700 °C) and laser energy density (>530 mJ /cm 2 ) promotes crystalline MoS 2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS 2 films by using a laser ablation processes. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)