Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si - Concepedia

Concepedia

Publication | Closed Access

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

13

Citations

42

References

2016

Year

Nalin Fernando, T. Nathan Nunley, Ayana Ghosh, C. M. Nelson, Jacqueline Cooke, Amber A. Medina, Stefan Zollner, Chi Xu, J. Menéndez, John Kouvetakis

Applied Surface Science

EngineeringPhysicsInterband Critical PointsBias Temperature InstabilityTemperature DependenceApplied PhysicsCondensed Matter PhysicsBulk GeSemiconductor MaterialSilicon On Insulator

References

	Year	Citations

Page 1

Page 1