Reliability assessment of power semiconductor devices

Abstract

This paper concerns some issues related to failures that occurred in power semiconductor devices. A review of basic requirements aimed at normal and reliable operation of semiconductor components is done by using reliability prediction approaches and prognostic methods. Special attention is paid to the reliability assessment and prediction of power switches, namely Insulated Gate Bipolar Transistors (IGBT). The opportunities for evaluating the reliability by applying the accelerated tests with constant electrical and thermal stresses are analyzed.