Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 - Concepedia

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Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3

23

Citations

15

References

2016

Year

M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf,

Solid-State Electronics

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringO 3NanoelectronicsApplied PhysicsPerformances Hfo 2Memory DeviceSemiconductor MemoryMicroelectronicsAl 2Phase Change Memory

References

	Year	Citations

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