Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories - Concepedia

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Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

64

Citations

11

References

2013

Year

Seonghyun Kim, Jubong Park, Jiyong Woo, Chunhum Cho, Wootae Lee, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Byoung Hun Lee,

Microelectronic Engineering

Materials ScienceElectrical EngineeringNanothin-nbo2-layer-based Pt/nbo2/pt StackEngineeringCross-point-type Resistive MemoriesNanoelectronicsNanotechnologyApplied PhysicsMemory DeviceSemiconductor MemoryThreshold-switching CharacteristicsMicroelectronicsPhase Change Memory

References

	Year	Citations

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