Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS Technology

Abstract

This paper studies integrated silicon light emitter implemented in standard CMOS technologies. A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength and avalanching bias conditions. Prototype light emitter is fabricated in a 3-μm standard CMOS technology, and its dc, phase shift, and direct modulation frequency response with nanowatt power level are characterized, with experimental results for a reverse-bias region showing light modulation with the simulated maximum modulation frequency around ~45 GHz being reported.