High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing

Abstract

Germanium n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /p junctions with high phosphorus dopant activation (>1020 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) and minimal dopant diffusion were achieved by P implantation and laser spike annealing (LSA) at temperatures ≥794 °C for 400 μs. In addition, there is no evidence of any residual extended defectivity near the junction after LSA. The effect of F co-doping was also investigated, demonstrating the reduction in both diffusion and activation. The thermal stability and electrical characteristics of Ge n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /p junction activated by LSA were evaluated.