Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

Chih‐Hsien Cheng, Yung‐Hsiang Lin, Ting-Hui Chen, Hsiang‐Yu Chen, Yu‐Chieh Chi, Chao-Kuei Lee, Chih‐I Wu, Gong‐Ru Lin

Scientific Reports · 2015 · 15 citations · 44 references

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Abstract

The study presents a novel demonstration of a passively mode-locked erbium-doped fiber laser (EDFL) that is based on a silicon carbide (SixC1-x) saturable absorber. When the C/Si composition ratio is increased to 1.83, the SixC1-x film transforms from two-photon absorption to nonlinear saturable absorption, and the corresponding value reaches -3.9 × 10(-6) cm/W. The Si-rich SixC1-x film cannot mode lock the EDFL because it induced high intracavity loss through two-photon absorption. Even when a stoichiometric SiC is used, the EDFL is mode locked, similar to an EDFL operating under weak nonlinear-polarization-rotation condition. A C-rich SixC1-x film containing sp(2)-orbital C-C bonds with a linear absorbance of 0.172 and nonlinear absorbance of 0.04 at a 181 MW/cm(2) saturation intensity demonstrates nonlinear transmittance. The C-rich SixC1-x saturable absorber successfully generates a short mode-locked EDFL pulse of 470 fs. The fluctuation of the pulse-train envelope dropps considerably from 11.6% to 0.8% when a strong saturable-absorption-induced self-amplitude modulation process occurs in the C-rich SixC1-x film.

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