A Logic Circuit Design for Perfecting Memristor-Based Material Implication

Abstract

Memristor-based material implication (M-IMP) logic is popular with logic operations, which provides a possibility that memory is operated directly. However, there is a small limitation that memristor is not able to reach the lowest resistance in M-IMP. In this brief, the M-IMP limitation and its influence are analyzed briefly. In addition, a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar is proposed, which can perfect the M-IMP limitation and eliminate the influence. Moreover, we simulate the proposed circuit design and the simulation results verify the correctness of the analysis.