Materials science forum · 2016 · 15 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDefects In Electronic MaterialsDevice CharacterizationIon ImplantationSemiconductor DefectsSemiconductor Device MaterialsSemiconductor ReliabilityElectroluminescenceElectronic DefectsImplantation-induced Defect FormationIon Implantation EffectsPoint DefectsRadiation EffectsSilicon Carbide (Sic) Materials
In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.