Publication | Closed Access
Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal
37
Citations
49
References
2016
Year
Non-volatile MemoryEngineeringNickel Oxide NanorodsFerroelectric Random-access MemoryPhase Change MemoryNio NanorodsFerroelectric ApplicationNanoelectronicsMemory DeviceFerroelectric Liquid CrystalMaterials ScienceDipolar NnioElectrical EngineeringNanotechnologyMicroelectronicsOptoelectronicsNanomaterialsApplied PhysicsSemiconductor MemoryFunctional Materials
A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.
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