Spontaneous Patterning of High‐Resolution Electronics via Parallel Vacuum Ultraviolet

Abstract

A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 μm resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm(2) V(-1) s(-1) in the devices with channel lengths of 1 and 5 μm, respectively.