International Journal of Circuit Theory and Applications · 2016 · 33 citations · 20 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsBicmos TechnologyCmos OscillatorsCmos Radio-frequency CircuitsDirect InjectionDirect Signal InjectionPower ConsumptionRadio-frequency Integrated Circuit DesignRf Cmos Design
Summary A wide locking range nMOS divide‐by‐2 RLC injection‐locked frequency divider (ILFD) was designed and implemented in the TSMC 0.18‐µm BiCMOS process. The ILFD is based on a cross‐coupled oscillator with one direct injection MOSFET and a RLC resonator. The RLC resonator is used to extend the locking range so that dual‐band locking ranges can be merged in one locking range at both low and high injection powers. At the drain‐source bias of 0.9 V for switching transistors, and at the incident power of 0 dBm the locking range of the divide‐by‐2 ILFD is 7.24 GHz, from the incident frequency 2.65 to 9.89 GHz, the locking range percentage is 115.47%. The power consumption of ILFD core is 8.685 mW. The die area is 0.726 × 0.930 mm 2 . Copyright © 2016 John Wiley & Sons, Ltd.
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